Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer

Thin Solid Films

Volumn 520, Issue 18, 2012, Pages 5894-5899

  Chirakkara, Saraswathi ^a   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Buffer layer; Heterojunction; Pulse laser deposition; Zinc oxide

Indexed keywords

BAND EMISSION; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CRYSTALLINITIES; CURRENT-VOLTAGE MEASUREMENTS; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; IDEALITY FACTORS; INTENSE BANDS; OPTICAL QUALITIES; P-TYPE SI; PHOTOLUMINESCENCE MEASUREMENTS; PULSE LASER DEPOSITION; RICHARDSON CONSTANT; RICHARDSON PLOT; ROOM TEMPERATURE; SOLAR-CELL APPLICATIONS; STANDARD DEVIATION; TEMPERATURE DEPENDENT; THEORETICAL VALUES; ZNO; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; ELECTRIC PROPERTIES; METALLIC FILMS; OPTICAL FILMS; OPTICAL WAVEGUIDES; PULSED LASER DEPOSITION; SILICON; THERMIONIC EMISSION; X RAY DIFFRACTION; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84862210138     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.05.003     Document Type: Article

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