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Volumn 17, Issue 10, 2002, Pages 2480-2483

Epitaxial growth on ZnO films on Si(111)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BAND STRUCTURE; BINDING ENERGY; EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0036803726     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2002.0361     Document Type: Article
Times cited : (55)

References (13)
  • 1
    • 0032516694 scopus 로고    scopus 로고
    • H. Ohno, Science 281, 951, 1998.
    • (1998) Science , vol.281 , pp. 951
    • Ohno, H.1
  • 6
    • 0030679050 scopus 로고    scopus 로고
    • edited by F.A. Ponce, T.D. Moustakas, J. Akasaki, and B.A. Monemar (Mater. Res. Soc. Symp. Proc.; Warrendale, PA)
    • T. Shirasawa, T. Honda, F. Koyama, and K. Iga, in III-V Nitrides, edited by F.A. Ponce, T.D. Moustakas, J. Akasaki, and B.A. Monemar (Mater. Res. Soc. Symp. Proc. 449, Warrendale, PA, 1997), p. 373.
    • (1997) III-V Nitrides , vol.449 , pp. 373
    • Shirasawa, T.1    Honda, T.2    Koyama, F.3    Iga, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.