Influence of interface charge on electrical properties of ZnO/Si heterojunction

Chinese Physics Letters

Volumn 22, Issue 1, 2005, Pages 185-187

  Lei, Huan ^a   Liu, Ci Hui ^a   Lin, Bi Xia ^a   Fu, Zhu Xi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; II-VI SEMICONDUCTORS; ZINC OXIDE;

BUILT-IN-POTENTIAL; CAPACITANCE CURRENT; CAPACITANCE VOLTAGE; CURRENT VOLTAGE PROPERTIES; INTERFACE CHARGE; JUNCTION PROPERTIES;

HETEROJUNCTIONS;

EID: 24644509201     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/1/053     Document Type: Article

References (13)

1. Wang C X, Gao C X and Liu H W 2003 Chin. Phys. Lett. 20 127
2. Zhang G B, Shi C S and Han Z F 2001 Chin. Phys. Lett. 18 441
3. Romero R, Lopez M C and Leinen D 2004 Mater. Sci. Engin. B 110 87
4. Fenske F, Kliefoth K, Elstner L and Selle B 1996 Mater. Res. Soc. Symp. Proc. 426 135
5. Shimizu Y and Okada Y 2004 Crystal Growth 265 99
6. Liu C H, Chen Y L, Lin B X, Zhu J J, Fu Z X and Pong C 2001 Chin. Phys. Lett. 18 1108
7. Yu L S 1990 Heterojunction Physics of Semiconductor (Beijing: National Science Press) p 41 (in Chinese)
8. Song D, Zhao J, Wang A, Widenborg P, Chin W and Aberle A G 2001 17th European Photovoltaic Solar Energy Conference (Munich)
9. Sieber I, Wanderka N, Urban I, Dorfel I and Schierhorn E 1998 Thin Solid Films 330 108
10. Kim K H, Park K C and Ma D Y 1997 Appl. Phys. 81 7764
11. Romero R, López M C and Leinen D 2004 Mater. Sci. Engin. B 110 91
12. Yu L S 1990 Heterojunction Physics of Semiconductor (Beijing: National Science Press) p 68 (in Chinese)
13. Liu E K, Zhu B S and Luo J S 1994 Semiconductor Physics (Beijing: National Defense Industry Press) p 217