Epitaxially grown n-ZnOMgOTiN n+ -Si (111) heterostructured light-emitting diode

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Sun, X W ^a,b   Zhao, J L ^a   Tan, S T ^b   Tan, L H ^b   Tung, C H ^b   Lo, G Q ^b   Kwong, D L ^b   Zhang, Y W ^c   Li, X M ^c   Teo, K L ^d,e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^e Department of Electrical and Computer Engineering ^*  (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; LIGHT EMITTING DIODES; OPTICAL RESOLVING POWER; PULSED LASER DEPOSITION;

ELECTROLUMINESCENCE BAND; EPITAXIAL QUALITY;

EPITAXIAL GROWTH;

EID: 41049085343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2896611     Document Type: Article

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