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Volumn 97, Issue 20, 2010, Pages

Temperature dependent transport behavior of n -InN nanodot/p-Si heterojunction structures

(6) Bhat, Thirumaleshwara N a Roul, Basanta a,b Rajpalke, Mohana K a Kumar, Mahesh a,b Krupanidhi, S B a Sinha, Neeraj c

a INDIAN INSTITUTE OF SCIENCE (India)

b BHARAT ELECTRONICS LIMITED (India)

c Office of Principal Scientific Advisor (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSONS; BAND OFFSETS; BARRIER HEIGHTS; BUILT-IN POTENTIAL; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; FLAT BAND; HETEROJUNCTION DIODES; HETEROJUNCTION STRUCTURES; LOW TEMPERATURES; NANODOTS; RECTIFYING BEHAVIORS; SI (100) SUBSTRATE; SI(1 0 0); SINGLE-CRYSTALLINE; TEMPERATURE DEPENDENT; TRANSPORT BEHAVIOR; TWO-MATERIALS;

DISTILLATION; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649295856 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517489 Document Type: Article

Times cited : (14)

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