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Applied Physics Letters

Volumn 93, Issue 25, 2008, Pages

Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer

(5) Aggarwal, Ravi a Jin, Chunming b Pant, Punam a Narayan, J a Narayan, Roger J a,b

a North Carolina State University (United States)

b NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CRYSTAL GROWTH; DIFFRACTION; EMISSION SPECTROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; GROWTH (MATERIALS); INTEGRATION; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; OXIDE FILMS; OXIDES; POINT DEFECTS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SOLIDS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; YTTRIA STABILIZED ZIRCONIA; YTTRIUM ALLOYS; ZINC; ZINC OXIDE; ZIRCONIA;

BIEPITAXIAL; CRYSTALLINE QUALITIES; DOMAIN MATCHING EPITAXIES; EPITAXIAL RELATIONSHIPS; EXCITONIC EMISSIONS; GREEN BANDS; OPTICAL EMISSIONS; ORIENTATION RELATIONSHIPS; PHOTOLUMINESCENCE SPECTRUMS; SELECTED AREA ELECTRON DIFFRACTIONS; SI (100) SUBSTRATES; STABILIZED ZIRCONIAS; X-RAY DIFFRACTIONS; ZINC OXIDE THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58149166463 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3050529 Document Type: Article

Times cited : (15)

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