Silicon surface passivation by an organic overlayer of 9,10- phenanthrenequinone

Applied Physics Letters

Volumn 96, Issue 22, 2010, Pages

  Avasthi, Sushobhan ^a   Qi, Yabing ^a   Vertelov, Grigory K ^a,b   Schwartz, Jeffrey ^a,b   Kahn, Antoine ^a   Sturm, James C ^a  

^a Princeton University   (United States)

^b PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH QUALITY; INVERSION LAYER; LOW-TEMPERATURE PROCESS; ORGANIC MOLECULES; ORGANIC SEMICONDUCTOR; PHENANTHRENEQUINONE; RECOMBINATION VELOCITY; SILICON (100); SILICON HETEROJUNCTIONS; SILICON INTERFACE; SILICON SURFACES;

DANGLING BONDS; ELECTRON MOBILITY; HETEROJUNCTIONS; PASSIVATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953567225     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3429585     Document Type: Article

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