Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy

Journal of Crystal Growth

Volumn 353, Issue 1, 2012, Pages 77-82

  Massoudi, I ^a   Habchi, M M ^a   Rebey, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

A1. Atomic force microscopy; A1. Roughening; B1. Bismuth compounds; B2. Semiconducting gallium arsenide

Indexed keywords

A1. ROUGHENING; EX SITU; EXPOSURE TIME; GAAS SUBSTRATES; GROWTH MODES; HIGH DENSITY; IN-SITU; INCIDENT BEAMS; ISOLATED ISLANDS; METAL-ORGANIC VAPOR PHASE EPITAXY; MIS-ORIENTATION; MISORIENTATIONS; MORPHOLOGICAL STUDY; SMALL ISLAND; SPECTRAL EVOLUTION; SPECTRAL RANGE; SPECTRAL REFLECTANCES; SURFACE UNDULATION; THEORETICAL SIMULATION;

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; BISMUTH; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM; SUBSTRATES;

REFLECTION;

EID: 84861705334     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.05.010     Document Type: Article

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