Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 275-278

  Habchi, M M ^a   Rebey, A ^a   Fouzri, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

AP MOVPE; HRXRD; InGaAs; Laser reflectometry

Indexed keywords

ATMOSPHERIC PRESSURE; LASER APPLICATIONS; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTOMETERS; SINGLE CRYSTALS; X RAY DIFFRACTION;

AP-MOVPE; HRXRD; LASER REFLECTOMETRY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33750583429     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.088     Document Type: Article

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