Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8372-8376

  Moussa, I ^a   Fitouri, H ^a   Rebey, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Atmospheric pressure metal organic chemical vapor deposition; GaAsBi; Reflectivity; Scanning electorn microscopy; X ray diffraction

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; METALS; ORGANIC CHEMICALS; ORGANOMETALLICS; REFLECTION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY POWDER DIFFRACTION;

CRYSTALLINE QUALITY; GAASBI; GROWTH CONDITIONS; GROWTH PARAMETERS; HIGH RESOLUTION X RAY DIFFRACTION; IN-SITU REFLECTIVITY MEASUREMENTS; METAL ORGANIC; METAL-ORGANIC VAPOUR PHASE EPITAXY;

ATMOSPHERIC TEMPERATURE;

EID: 50849136169     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.04.062     Document Type: Article

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