Real-time monitoring of InAs QD growth procedure on InP substrate by spectral reflectance

Applied Surface Science

Volumn 255, Issue 3, 2008, Pages 656-658

  Ahn, E ^a   Park, K ^a   Kim, B ^a   Kim, Y D ^b   Yoon, E ^a  

^a Seoul National University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

In situ monitoring; InAs; InP; Metalorganic chemical vapor deposition; Multibeam optical stress sensor; Spectral reflectance

Indexed keywords

DIMERS; INDIUM ARSENIDE; INDIUM PHOSPHIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFLECTION; SEMICONDUCTING INDIUM PHOSPHIDE; STRESS MEASUREMENT;

EXCHANGE REACTION; IN- SITU MONITORING; INAS; MULTIBEAM OPTICAL STRESS SENSORS; REAL TIME MONITORING; RICH CONDITIONS; SPECTRAL REFLECTANCES; SURFACE PROCESS;

III-V SEMICONDUCTORS;

EID: 55649119991     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.047     Document Type: Article

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