Surface modifications induced by bismuth on (0 0 1) GaAs surfaces

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 85-90

  Jiang, W Y ^a   Liu, J Q ^a   So, M G ^a   Myrtle, K ^a   Kavanagh, K L ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

A1. Desorption; A1. Optical spectroscopy; A1. Surface structure; A3. Organometallic vapor phase epitaxy

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; BISMUTH; CRYSTAL ORIENTATION; DESORPTION; MATERIALS SCIENCE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; ORGANOMETALLICS; REFLECTION; SPECTROSCOPIC ANALYSIS; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA; SURFACE TREATMENT; VAPOR PRESSURE;

HYDROGEN PURGE; OPTICAL SPECTROSCOPY; REFLECTANCE DIFFERENCE (RD); REFLECTANCE DIFFERENCE SPECTROSCOPY (RDS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 15944363044     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.060     Document Type: Article

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