Surface analysis of different oriented GaAs substrates annealed under bismuth flow

Journal of Crystal Growth

Volumn 300, Issue 2, 2007, Pages 347-352

  Fitouri, H ^a   Moussa, I ^a   Rebey, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

A1. Islands density; B1. Bismuth; B1. MOVPE; B1. Oriented GaAs

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMIC FORCE MICROSCOPY; BISMUTH; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY;

ISLANDS DENSITY; LASER REFLECTOMETRY; ORIENTED GAAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33847717901     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.033     Document Type: Article

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