In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE

Journal of Crystal Growth

Volumn 261, Issue 4, 2004, Pages 450-457

  Rebey, A ^a   Habchi, M M ^a   Bchetnia, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

A1. Etching; A1. Laser reflectometry; A3. Metalorganic vapor phase epitaxy; B1. AlAs; B1. GaAs

Indexed keywords

ETCHING; LASER APPLICATIONS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMICS;

LASER REFLECTOMETRY; OPTICAL MONITORING;

SEMICONDUCTOR GROWTH;

EID: 0346338376     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.042     Document Type: Article

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