Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 242, Issue 3-4, 2002, Pages 302-308

  Zhang, L ^a   Tang, H F ^a   Schieke, J ^a   Mavrikakis, M ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; GALLIUM NITRIDE; HOLE TRAPS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

GAS-PHASE CONCENTRATIONS;

CRYSTAL GROWTH;

EID: 0036645162     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01419-7     Document Type: Article

References (21)