Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 476-479

  Fitouri, H ^a   Moussa, I ^a   Rebey, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Bismuth; GaAsBi; HRXRD; MOVPE

Indexed keywords

DIFFRACTION PEAKS; GAAS SUBSTRATES; GAASBI; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOLAR FLOW RATES; MOVPE; MOVPE GROWTH; THERMAL-ANNEALING; TRIMETHYL; V/III RATIO;

ATOMIC FORCE MICROSCOPY; BISMUTH; DIFFRACTION; FILM GROWTH; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 79751537375     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.11.016     Document Type: Conference Paper

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