Carrier gas and ion beam parameter effects on the structure and properties of a-C:H/SiO x films deposited employing closed drift ion beam source

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 282, Issue , 2012, Pages 116-120

  Tamulevičiene, Asta ^a   Meškinis, Šarunas ^a   Kopustinskas, Vitoldas ^a   Tamulevičius, Sigitas ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

Ion beam energy current density; SiO x containing a C:H films

Indexed keywords

A-C:H FILMS; AMORPHOUS HYDROGENATED CARBON FILMS; B-PARAMETER; BEAM PARAMETER; CARRIER GAS; FTIR ANALYSIS; HEXAMETHYL DISILOXANE; ION BEAM CURRENTS; ION BEAM ENERGY; ION BEAM SOURCE; MAXIMUM HARDNESS; RATIO DEPENDENCE; SI-H BONDS; STRUCTURAL CHANGE; STRUCTURE AND PROPERTIES;

CURRENT DENSITY; GASES; MECHANICAL PROPERTIES; RAMAN SPECTROSCOPY;

ION BEAMS;

EID: 84861645071     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.08.064     Document Type: Conference Paper

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