Growth and properties of the ion beam deposited SiOx containing DLC films

Vacuum

Volumn 83, Issue SUPPL.1, 2009, Pages

  Meškinis, Š ^a   Andrulevicius M ^a   Slapikas K ^a   Iljinas, A ^a   Gudaitis, R ^a   Puiso J ^a   Tamulevicius S ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

Electrical properties; Ion beam deposition; Optical emission spectroscopy (OES); Optical properties; Raman spectroscopy; SiOx containing DLC; XPS

Indexed keywords

ATOMIC HYDROGENS; BALMER SERIES; CHEMICAL COMPOSITIONS; DISSOCIATION CONDITIONS; DLC FILMS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTIES; HEXAMETHYLDISILOXANE; IN-SITU; INTENSITY RATIOS; ION BEAM DEPOSITION; ION BEAM ENERGIES; SIOX CONTAINING DLC; XPS;

ATOMIC SPECTROSCOPY; BEAM PLASMA INTERACTIONS; CARBON FILMS; CHEMICAL MODIFICATION; DIAMOND FILMS; DIAMOND LIKE CARBON FILMS; DIAMONDS; DISSOCIATION; ELECTRIC PROPERTIES; ELECTRODEPOSITION; EMISSION SPECTROSCOPY; GROWTH KINETICS; HYDROGEN; ION BEAMS; ION BOMBARDMENT; ION SOURCES; IONS; LIGHT EMISSION; MOLECULAR SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; PHOTORESISTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; SPECTRUM ANALYSIS; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL FILMS;

EID: 67349261354     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.01.041     Document Type: Article

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