Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 641-646

  Sampath, A V ^a   Garrett, G A ^a   Collins, C J ^a   Sarney, W L ^a   Readinger, E D ^a   Newman, P G ^a   Shen, H ^a   Wraback, M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

AlGaN; Molecular beam epitaxy (MBE); Ordering; Ultraviolet light emitting diode (UVLED)

Indexed keywords

DOUBLE HETEROSTRUCTURES (DH); PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE); ULTRAVIOLET LIGHT-EMITTING DIODE (UVLED);

HETEROJUNCTIONS; LIGHT EMITTING DIODES; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN COMPOUNDS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33646819325     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0113-1     Document Type: Conference Paper

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