Reduction of threading dislocation density in 2H-AlN grown on 6H-SiC(0001) by minimizing unintentional active-nitrogen exposure before growth

Applied Physics Express

Volumn 4, Issue 2, 2011, Pages

  Okumura, Hironori ^a   Kimoto, Tsunenobu ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; BI-LAYER; DISLOCATION DENSITIES; LAYER-BY-LAYER GROWTH; PRE-DEPOSITION; RF PLASMA; SIC SUBSTRATES; STEP EDGE; THREADING DISLOCATION DENSITIES;

DEPOSITION; GALLIUM; NITROGEN; NITROGEN PLASMA; OPTIMIZATION; SCREW DISLOCATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; SOIL CONSERVATION;

EDGE DISLOCATIONS;

EID: 79951619387     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.025502     Document Type: Article

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