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Nanotechnology

Volumn 23, Issue 22, 2012, Pages

Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth

(4) Ikpi, M E a,b Atkinson, P b,c Bremner, S P b,d Ritchie, D A b

a UNIVERSITY OF CALABAR (Nigeria)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c INSTITUT DES NANOSCIENCES DE PARIS (France)

d UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CROSS-WIRE; GAAS; GAAS(1 0 0); INAS QUANTUM DOTS; MESA-STRIPE; MOLECULAR BEAM EPITAXIAL; QUANTUM DOT CHAINS; SELF-ALIGNED; STANDARD PHOTOLITHOGRAPHY; SUBMICRON;

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; FABRICATION; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAMS; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; WIRE;

LIGHT EMITTING DIODES;

EID: 84861088553 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/23/22/225304 Document Type: Article

Times cited : (2)

References (33)

1
- 80052059172
- 10.1016/S1369-7021(11)70183-3 1369-7021
- Bimberg D and Pohl U W 2011 Mater. Today 14 388
- (2011) Mater. Today , vol.14 , Issue.9 , pp. 388
- Bimberg, D.¹ Pohl, U.W.²

2
- 0032626023
- 10.1109/3.766837 0018-9197
- Phillips J, Bhattacharya P, Kennerly S W, Beekman D W and Dutta M 1999 IEEE J. Quantum Electron. 35 936
- (1999) IEEE J. Quantum Electron. , vol.35 , Issue.6 , pp. 936
- Phillips, J.¹ Bhattacharya, P.² Kennerly, S.W.³ Beekman, D.W.⁴ Dutta, M.⁵

3
- 34249896418
- 10.1038/nphoton.2007.46 1749-4885
- Shields A J 2007 Nature Photon. 1 215
- (2007) Nature Photon. , vol.1 , Issue.4 , pp. 215
- Shields, A.J.¹

4
- 0033309556
- Spontaneous nanostructure formation on GaAs(211)B substrate
- DOI 10.1016/S0022-0248(99)00273-0
- Lee J S, Sugou S and Masumoto Y 1999 J. Cryst. Growth 205 467 (Pubitemid 30511142)
- (1999) Journal of Crystal Growth , vol.205 , Issue.4 , pp. 467-473
- Lee, J.-S.¹ Sugou, S.² Masumoto, Y.³

5
- 1842738083
- 10.1063/1.1669064 0003-6951
- Wang Z M, Holmes K, Mazur Y I and Salamo G J 2004 Appl. Phys. Lett. 84 1931
- (2004) Appl. Phys. Lett. , vol.84 , Issue.11 , pp. 1931
- Wang, Z.M.¹ Holmes, K.² Mazur, Y.I.³ Salamo, G.J.⁴

6
- 67249087166
- 10.1063/1.3094029 0021-8979 093711
- Yadav A, Pipe K P, Ye W and Goldman R S 2009 J. Appl. Phys. 105 093711
- (2009) J. Appl. Phys. , vol.105 , Issue.9
- Yadav, A.¹ Pipe, K.P.² Ye, W.³ Goldman, R.S.⁴

7
- 33745020052
- Localized formation of InAs quantum dots on shallow-patterned GaAs(100)
- DOI 10.1063/1.2209157
- Wang Z M, Lee J H, Liang B L, Black W T, Kunets V P, Mazur Y I and Salamo G J 2006 Appl. Phys. Lett. 88 233102 (Pubitemid 43877754)
- (2006) Applied Physics Letters , vol.88 , Issue.23 , pp. 233102
- Wang, Zh.M.¹ Lee, J.H.² Liang, B.L.³ Black, W.T.⁴ Kunets, V.P.⁵ Mazur, Yu.I.⁶ Salamo, G.J.⁷

8
- 62549115383
- 10.1103/PhysRevB.79.075318 1098-0121 B 075318
- Yuasa K, Okano K, Nakazato H, Kashiwada S and Yoh K 2009 Phys. Rev. B 79 075318
- (2009) Phys. Rev. , vol.79 , Issue.7
- Yuasa, K.¹ Okano, K.² Nakazato, H.³ Kashiwada, S.⁴ Yoh, K.⁵

9
- 77956325112
- 10.1103/PhysRevA.82.022336 1050-2947 A 022336
- Yang S, Bayat A and Bose S 2010 Phys. Rev. A 82 022336
- (2010) Phys. Rev. , vol.82 , Issue.2
- Yang, S.¹ Bayat, A.² Bose, S.³

10
- 33846687874
- 10.1088/1367-2630/9/1/020 1367-2630
- Spiller T P, DAmico I and Lovett B W 2007 New J. Phys. 9 20
- (2007) New J. Phys. , vol.9 , Issue.1 , pp. 20
- Spiller, T.P.¹ Damico, I.² Lovett, B.W.³

11
- 36449003117
- 10.1063/1.113871 0003-6951
- Mui D S L, Leonard D, Coldren L A and Petroff P M 1995 Appl. Phys. Lett. 66 1620
- (1995) Appl. Phys. Lett. , vol.66 , Issue.13 , pp. 1620
- Mui, D.S.L.¹ Leonard, D.² Coldren, L.A.³ Petroff, P.M.⁴

12
- 0000957877
- Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
- DOI 10.1063/1.115867, PII S0003695196016161
- Jeppesen S, Miller M S, Hessman D, Kowalski B, Maximov I and Samuelson L 1996 Appl. Phys. Lett. 68 2228 (Pubitemid 126683769)
- (1996) Applied Physics Letters , vol.68 , Issue.16 , pp. 2228-2230
- Jeppesen, S.¹ Miller, M.S.² Hessman, D.³ Kowalski, B.⁴ Maximov, I.⁵ Samuelson, L.⁶

13
- 0035832844
- 10.1063/1.1383274 0003-6951
- Lee S C, Dawson L R, Malloy K J and Brueck S R J 2001 Appl. Phys. Lett. 79 263
- (2001) Appl. Phys. Lett. , vol.79 , Issue.2 , pp. 263
- Lee, S.C.¹ Dawson, L.R.² Malloy, K.J.³ Brueck, S.R.J.⁴

14
- 29644437217
- Study of nucleation positions of InAs islands on stripe-patterned GaAs (1 0 0) substrate
- DOI 10.1016/j.physe.2005.09.006, PII S1386947705003693
- Ciu C X, Chen Y H, Jin P, Xu B, Ren Y Y, Zhao C and Wang Z G 2006 Physica E 31 43 (Pubitemid 43022888)
- (2006) Physica E: Low-Dimensional Systems and Nanostructures , vol.31 , Issue.1 , pp. 43-47
- Cui, C.X.¹ Chen, Y.H.² Jin, P.³ Xu, B.⁴ Ren, Y.Y.⁵ Zhao, C.⁶ Wang, Z.G.⁷

15
- 79960439418
- 10.1088/0957-4484/22/29/295604 0957-4484 295604
- Hakkarainen T V, Tommila J, Schramm A, Tukiainen A, Ahorinta R, Dumitrescu M and Guina M 2011 Nanotechnology 22 295604
- (2011) Nanotechnology , vol.22 , Issue.29
- Hakkarainen, T.V.¹ Tommila, J.² Schramm, A.³ Tukiainen, A.⁴ Ahorinta, R.⁵ Dumitrescu, M.⁶ Guina, M.⁷

16
- 0000630074
- Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
- DOI 10.1063/1.120691, PII S0003695198039023
- Konkar A, Madhukar A and Chen P 1998 Appl. Phys. Lett. 72 220 (Pubitemid 128672266)
- (1998) Applied Physics Letters , vol.72 , Issue.2 , pp. 220-222
- Konkar, A.¹ Madhukar, A.² Chen, P.³

17
- 0343701724
- Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates
- DOI 10.1063/1.121915, PII S0003695198040303
- Zhang R, Tsui R, Shiralagi K, Convey D and Goronkin H 1998 Appl. Phys. Lett. 73 505 (Pubitemid 128673826)
- (1998) Applied Physics Letters , vol.73 , Issue.4 , pp. 505-507
- Zhang, R.¹ Tsui, R.² Shiralagi, K.³ Convey, D.⁴ Goronkin, H.⁵

18
- 0034248807
- 10.1016/S0169-4332(00)00255-5 0169-4332
- Yamaguchi K, Hiraike T and Kawaguchi K 2000 Appl. Surf. Sci. 162/163 590
- (2000) Appl. Surf. Sci. , vol.162-163 , pp. 590
- Yamaguchi, K.¹ Hiraike, T.² Kawaguchi, K.³

19
- 0036131543
- Self-assembled InAs quantum dots on InP nano-templates
- DOI 10.1016/S0022-0248(01)01739-0, PII S0022024801017390
- Lefebvre J, Poole P J, Fraser J, Aers G C, Chithrani D and Williams R L 2002 J. Cryst. Growth 234 391 (Pubitemid 33076500)
- (2002) Journal of Crystal Growth , vol.234 , Issue.2-3 , pp. 391-398
- Lefebvre, J.¹ Poole, P.J.² Fraser, J.³ Aers, G.C.⁴ Chithrani, D.⁵ Williams, R.L.⁶

20
- 84861046656
- 10.1103/PhysRevLett.92.025502 0031-9007 025502
- Yang B, Liu R and Lagally M G 2004 Phys. Rev. Lett. 92 025502
- (2004) Phys. Rev. Lett. , vol.92 , Issue.2
- Yang, B.¹ Liu, R.² Lagally, M.G.³

21
- 33947312145
- 2 source on non-planar GaAs substrates
- DOI 10.1016/j.jcrysgro.2006.11.054, PII S0022024806013145
- Sugaya T, Morohashi I, Komori K and Amano T 2007 J. Cryst. Growth 301/302 762 (Pubitemid 46441030)
- (2007) Journal of Crystal Growth , vol.301-302 , Issue.SPEC. ISS. , pp. 762-765
- Sugaya, T.¹ Morohashi, I.² Komori, K.³ Amano, T.⁴

22
- 18444367416
- Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates
- DOI 10.1016/j.jcrysgro.2004.12.178, PII S0022024804020998, 13th International Conference on Molecular Beam Epitaxy
- Ikpi M E, Atkinson P, Bremner S P and Ritchie D A 2005 J. Cryst. Growth 278 113 (Pubitemid 40643327)
- (2005) Journal of Crystal Growth , vol.278 , Issue.1-4 , pp. 113-118
- Ikpi, M.E.¹ Atkinson, P.² Bremner, S.P.³ Ritchie, D.A.⁴

23
- 67650381977
- 10.1016/j.jcrysgro.2009.04.031 0022-0248
- Ikpi M E, Atkinson P, Bremner S P and Ritchie D A 2009 J. Cryst. Growth 311 3911
- (2009) J. Cryst. Growth , vol.311 , Issue.15 , pp. 3911
- Ikpi, M.E.¹ Atkinson, P.² Bremner, S.P.³ Ritchie, D.A.⁴

24
- 62149091733
- 10.1063/1.3086887 0003-6951 091102
- Wang X-L, Furue S, Ogura M, Voliotis V, Ravaro M, Enderlin A and Grousson R 2009 Appl. Phys. Lett. 94 091102
- (2009) Appl. Phys. Lett. , vol.94 , Issue.9
- Wang, X.-L.¹ Furue, S.² Ogura, M.³ Voliotis, V.⁴ Ravaro, M.⁵ Enderlin, A.⁶ Grousson, R.⁷

25
- 0027617573
- 10.1088/0268-1242/8/6/007 0268-1242
- Okamato A 1993 Semicond. Sci. Technol. 8 1011
- (1993) Semicond. Sci. Technol. , vol.8 , Issue.6 , pp. 1011
- Okamato, A.¹

26
- 37849186243
- Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy
- DOI 10.1016/j.jcrysgro.2006.09.027, PII S0022024806008657
- Lin J C, Hogg R, Fry P, Hopkinson M, Ross I, Cullis A, Kolodka R, Tartakovskii A and Skolnick M 2006 J. Cryst. Growth 297 38 (Pubitemid 44827083)
- (2006) Journal of Crystal Growth , vol.297 , Issue.1 , pp. 38-43
- Lin, J.C.¹ Hogg, R.² Fry, P.³ Hopkinson, M.⁴ Ross, I.⁵ Cullis, A.⁶ Kolodka, R.⁷ Tartakovskii, A.⁸ Skolnick, M.⁹

27
- 0031683313
- 10.1016/S0169-4332(97)00524-2 0169-4332
- Burke T M, Brown S J, Smith M P, Linfield E H, Ritchie D A, Pepper M, Tang K B K, Palmer R E and Burroughes J H 1998 Appl. Surf. Sci. 123/124 308
- (1998) Appl. Surf. Sci. , vol.123-124 , pp. 308
- Burke, T.M.¹ Brown, S.J.² Smith, M.P.³ Linfield, E.H.⁴ Ritchie, D.A.⁵ Pepper, M.⁶ Tang, K.B.K.⁷ Palmer, R.E.⁸ Burroughes, J.H.⁹

28
- 0033101238
- 10.1109/3.748840 0018-9197
- North A, Burroughes J, Burke T, Shields A, Norman C E and Pepper M 1999 IEEE J. Quantum Electron. 35 352
- (1999) IEEE J. Quantum Electron. , vol.35 , Issue.3 , pp. 352
- North, A.¹ Burroughes, J.² Burke, T.³ Shields, A.⁴ Norman, C.E.⁵ Pepper, M.⁶

29
- 0023455604
- Free surfaces and multilayer interfaces in the GaAs/AlAs system
- DOI 10.1016/0022-0248(87)90198-9
- Choi D K, Takai T, Erkoc S, Halicioglu T and Tiller W A 1987 J. Cryst. Growth 85 9 (Pubitemid 18522135)
- (1987) Journal of Crystal Growth , vol.85 , Issue.1-2 , pp. 9-15
- Choi, D.K.¹ Takai, T.² Erkoc, S.³ Halicioglu, T.⁴ Tiller, W.A.⁵

30
- 2942674933
- 10.1063/1.1699480 0021-8979
- Williams R S, Ashwin M J, Jones T S and Neave J H 2004 J. Appl. Phys. 95 6112
- (2004) J. Appl. Phys. , vol.95 , Issue.11 , pp. 6112
- Williams, R.S.¹ Ashwin, M.J.² Jones, T.S.³ Neave, J.H.⁴

31
- 0001325436
- 10.1063/1.124894 0003-6951
- Gayral B, Gérard J M, Lemaître A, Dupuis C, Manin L and Pelouard J L 1999 Appl. Phys. Lett. 75 1908
- (1999) Appl. Phys. Lett. , vol.75 , Issue.13 , pp. 1908
- Gayral, B.¹ Gérard, J.M.² Lemaître, A.³ Dupuis, C.⁴ Manin, L.⁵ Pelouard, J.L.⁶

32
- 0034478797
- PART 2 10.1143/JJAP.39.L1245 0021-4922
- Yamaguchi K, Yujobo K and Kaizui T 2000 Japan. J. Appl. Phys. 39 L1245
- (2000) Japan. J. Appl. Phys. , vol.39 , Issue.12 A , pp. 1245
- Yamaguchi, K.¹ Yujobo, K.² Kaizui, T.³

33
- 34249906726
- One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
- DOI 10.1016/j.jcrysgro.2007.04.024, PII S0022024807003880
- Teng J H, Dong J R, Chong L F, Chua S J, Wang Y J and Chen A 12007 J. Cryst. Growth 305 45 (Pubitemid 46874442)
- (2007) Journal of Crystal Growth , vol.305 , Issue.1 , pp. 45-49
- Teng, J.H.¹ Dong, J.R.² Chong, L.F.³ Chua, S.J.⁴ Wang, Y.J.⁵ Chen, A.⁶

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