SCOPUS 정보 검색 플랫폼

Volumn 278, Issue 1-4, 2005, Pages 113-118

Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates

(4) Ikpi, M E a Atkinson, P a Bremner, S P a Ritchie, D A a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

A1. Surface processes; A3. Molecular beam epitaxy; Al. Atomic force microscopy; Al. Low dimensional structures; Al. Mass transfer

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MASS TRANSFER; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SURFACE PHENOMENA;

LOW-DIMENSIONAL STRUCTURES; STRANSKI-KRASTANOV (SK) MODE; SURFACE PROCESSES; WET CHEMICAL ETCHING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 18444367416 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.178 Document Type: Conference Paper

Times cited : (4)

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