Spontaneous nanostructure formation on GaAs(211)B substrate

Journal of Crystal Growth

Volumn 205, Issue 4, 1999, Pages 467-473

  Lee, Jeong Sik ^a   Sugou, Shigeo ^a   Masumoto, Yasuaki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACIAL ENERGY; KINETIC THEORY; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TEMPERATURE;

INDIUM ARSENIDE; STRANSKI-KRASTANOW MECHANISM; SUBSTRATE ORIENTATION; SURFACE RECONSTRUCTION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0033309556     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00273-0     Document Type: Article

References (18)

1. Guha S., Madhukar A., Rajkumar K.C. Appl. Phys. Lett. 57:1990;2110.
2. Schmidt K.H., Medeiros-Ribeiro G., Garcia J.M., Petroff P.M. Appl. Phys. Lett. 70:1985;1727.
3. Tsui R., Shiralagi K., Convey D., Goronkin H. Appl. Phys. Lett. 73:1998;505.
4. Konkar A., Madhukar A., Chen P. Appl. Phys. Lett. 72:1998;220.
5. Notzel R., Temmyo J., Tamamura T. Jpn. J. Appl. Phys. Lett. 33(2):1994;L275.
6. Yamaguchi H., Belk J.K., Zhang X.M., Sudijono J.L., Fahy M.R., Jones T.S., Joyce B.A. Appl. Surf. Sci. 112:1997;138.
7. Lee J.-S., Isshiki H., Sugano T., Aoyagi Y. J. Appl. Phys. 83:1998;5525.
8. Anan T., Nishi K., Sugou S. Appl. Phys. Lett. 60:1992;3159.
9. Lee J.-S., Sugou S., Ren H.-W., Masumoto Y., Kurihara K. Appl. Surf. Sci. 41:1999;114.
10. Tersoff J., Tromp R.M. Phys. Rev. Lett. 70:1993;2782.
11. Nabetani Y., Ishikawa T., Noda S., Sasaki A. J. Appl. Phys. 76:1994;347.
12. Kitamura M., Nishioka M., Oshinowo J., Arakawa Y. Appl. Phys. Lett. 66:1995;3663.
13. Osakabe N., Tanishiro Y., Yagi K., Honjo G. Surf. Sci. 109:1981;353.
14. Goldburg J.L., Wang A.-S., Wei J., Bartelt N.C., Williams E.D. J. Vac. Sci. Technol. A. 9:1991;1868.
15. Woolf D.A., Westwood D.I., Williams R.H. Appl. Phys. Lett. 62:1993;1370.
16. Lee J.-S., Isshiki H., Sugano T., Aoyagi Y. J. Crystal Growth. 183:1998;43.
17. Yang K., Schowalter L.J., Thundat T. Appl. Phys. Lett. 64:1994;1641.
18. Kawabe M., Chun Y., Nakajima S., Akahane K. Jpn. J. Appl. Phys. 36:1997;4078.