Hydrogen radical cleaning and low energy electron stimulated desorption of surface contaminants for MBE regrowth of GaAs

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 308-312

  Burke, T M ^a   Brown, S J ^a   Smith, M P ^a   Linfield, E H ^a   Ritchie, D A ^a   Pepper, M ^a,c   Tang, K B K ^b   Palmer, R E ^b   Burroughes, J H ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; DESORPTION; ELECTRON BEAMS; EPITAXIAL GROWTH; HETEROJUNCTIONS; HYDROGEN; MORPHOLOGY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE CLEANING;

THERMAL DECONTAMINATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031683313     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00524-2     Document Type: Article

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