Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)

Nanotechnology

Volumn 22, Issue 29, 2011, Pages

  Hakkarainen, T V ^a   Tommila, J ^a   Schramm, A ^a   Tukiainen, A ^a   Ahorinta, R ^a   Dumitrescu, M ^a   Guina, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL FACETS; GAAS(1 0 0); GROWTH CONDITIONS; INAS QUANTUM DOTS; PEAK WAVELENGTH; QUANTUM DOT CHAINS; STRUCTURAL CHARACTERIZATION; CONTROLLED GROWTH; DOT DENSITY;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOIMPRINT LITHOGRAPHY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; CHAINS; GROUND STATE; QUANTUM THEORY;

QUANTUM THEORY; SEMICONDUCTOR QUANTUM DOTS;

EID: 79960439418     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/29/295604     Document Type: Article

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