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Volumn 94, Issue 9, 2009, Pages

Ultrahigh spontaneous emission extraction efficiency induced by evanescent wave coupling

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE REFLECTION; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; SUBSTRATES;

EID: 62149091733     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086887     Document Type: Article
Times cited : (15)

References (17)
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    • Similar results were also obtained for a point from an electric dipole oriented along the V-groove axis direction, but in that case the intensities of the side emission lobes are slightly stronger than the case of in-plane orientation.
    • Similar results were also obtained for a point from an electric dipole oriented along the V-groove axis direction, but in that case the intensities of the side emission lobes are slightly stronger than the case of in-plane orientation.


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