One-dimensional alignment of InAs dots on strain-controlled InGaAs layers by selective-area molecular-beam epitaxy

Applied Surface Science

Volumn 162, Issue , 2000, Pages 590-594

  Yamaguchi, Koichi ^a   Hiraike, Tadahiro ^a   Kawaguchi, Kazutoshi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY CRYSTALLOGRAPHY;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034248807     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00255-5     Document Type: Article

References (12)

1. Leonard D., Krishnamurthy M., Reaves C.M., Denbaars S.P., Petroff P.M. Appl. Phys. Lett. 63:1993;3203.
2. Mui D.S.L., Leonard D., Coldren L.A., Petroff P.M. Appl. Phys. Lett. 66:1995;1620.
3. Kitamura M., Nishioka M., Oshinowo J., Arakawa Y. Appl. Phys. Lett. 66:1995;3663.
4. Kamins T.I., Williams R.S. Appl. Phys. Lett. 71:1997;1201.
5. Tersoff J., Teichert C., Lagally M.G. Phy. Rev. Lett. 76:1996;1675.
6. Yamaguchi K., Waki E., Hasegawa H. Jpn. J. Appl. Phys. 36:1997;L871.
7. Hiwatashi F., Yamaguchi K. Appl. Surf. Sci. 130-132:1998;737.
8. Häsler K., Eberl K., Noll F., Trampert A. Phys. Rev. B. 54:1996;4913.
9. Xie Y.H., Samavedam S.B., Bulsara M., Langdo T.A., Fitzgerald E.A. Appl. Phys. Lett. 71:1997;3567.
10. Matthews J.W., Blakeslee A.E. J. Cryst. Growth. 27:1974;118.
11. Christiansen S., Albrecht M., Strunk H.P., Hansson P.O., Bauser E. Appl. Phys. Lett. 66:1995;574.
12. Kavanagh K.L., Capano M.A., Hobbs L.W., Barbour J.C., Maree P.M.J., Schaff W., Mayer J.W., Pettit D., Woodall J.M., Stroscio J.A., Feenstra R.M. J. Appl. Phys. 64:1988;4843.