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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 31, Issue 1, 2006, Pages 43-47

Study of nucleation positions of InAs islands on stripe-patterned GaAs (1 0 0) substrate

(7) Cui, C X a Chen, Y H a Jin, P a Xu, B a Ren, Y Y a Zhao, C a Wang, Z G a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

GaAs; Molecular beam epitaxy; Nucleation positions; Patterned substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; STRUCTURE (COMPOSITION); SURFACE PHENOMENA;

GAAS; INAS QUANTUM DOTS; NUCLEATION POSITIONS; PATTERNED SUBSTRATE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 29644437217 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2005.09.006 Document Type: Article

Times cited : (6)

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