One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application

Journal of Crystal Growth

Volumn 305, Issue 1, 2007, Pages 45-49

  Teng, J H ^a   Dong, J R ^a   Chong, L F ^a   Chua, S J ^a,b   Wang, Y J ^a   Chen, A ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials; B2. Semiconducting indium phosphide

Indexed keywords

CRYSTAL GROWTH; DISTRIBUTED FEEDBACK LASERS; HOLOGRAPHY; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; WET ETCHING;

ALIGNED GROWTH; DIELECTRIC GRATING; LASER HOLOGRAPHY; SELECTIVE EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34249906726     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.024     Document Type: Article

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