The Two-Dimensional Lateral Injection In-Plane Laser

IEEE Journal of Quantum Electronics

Volumn 35, Issue 3, 1999, Pages 352-357

  North, Angus ^a,c,d   Burroughes, Jeremy ^b   Burke, Theresa ^a   Shields, Andrew ^b   Norman, Carl E ^b,e,f,g   Pepper, Michael ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF SYDNEY   (Australia)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e IMPERIAL COLLEGE LONDON   (United Kingdom)

^f CNR   (Italy)

^g MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Charge injection; Hot carriers; Quantum well lasers; Semiconductor device doping; Semiconductor junctions; Ultrafast electronics

Indexed keywords

CONTINUOUS WAVE LASERS; HETEROJUNCTIONS; HOT CARRIERS; INJECTION LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CHARGE INJECTION;

QUANTUM WELL LASERS;

EID: 0033101238     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.748840     Document Type: Article

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