Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy

Journal of Crystal Growth

Volumn 297, Issue 1, 2006, Pages 38-43

  Lin, J C ^a   Hogg, R ^a   Fry, P ^a   Hopkinson, M ^a   Ross, I ^a   Cullis, A ^a   Kolodka, R ^a   Tartakovskii, A ^a   Skolnick, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

A3. Molecular beam epitaxy; A3. Polycrystalline deposition; B2. Semiconducting III V materials

Indexed keywords

MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

DIELECTRIC MASKS; POLYCRYSTALLINE DEPOSITION; SEMICONDUCTING III-V MATERIALS;

POLYCRYSTALS;

EID: 37849186243     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.027     Document Type: Article

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