The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution

Journal of Crystal Growth

Volumn 311, Issue 15, 2009, Pages 3911-3917

  Ikpi, M E ^a   Atkinson, P ^a   Bremner, S P ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Adatom migration; A1. Low dimensional structure; A1. Surface process; A3. Molecular beam epitaxy

Indexed keywords

A1. ADATOM MIGRATION; A1. LOW-DIMENSIONAL STRUCTURE; A1. SURFACE PROCESS; A3. MOLECULAR BEAM EPITAXY; DOT DENSITY; GAAS; GAAS SUBSTRATES; INAS; INAS QUANTUM DOTS; MESA SHAPE; MESA SIDEWALL; MESA STRUCTURE; SEM; STEP HEIGHT; SUBSTRATE TEMPERATURE; SURFACE CURVATURES;

ADATOMS; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SURFACE MORPHOLOGY; THERMAL EFFECTS;

SUBSTRATES;

EID: 67650381977     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.031     Document Type: Article

References (35)

1. Koshiba S., Noge H., Akiyama H., Inoshita T., Nakamura Y., Shimizu A., Nagamune Y., Tsuchiya M., Kano H., Sakaki H., and Wada K. Appl. Phys. Lett. 64 (1994) 363
2. Rajkumar K.C., Madhuker A., Rammohan K., Rich D.H., Chen P., and Chen L. Appl. Phys. Lett. 63 (1993) 2905
3. Watanabe S., Koshiba S., Yoshita M., Sakaki H., Baba M., and Akiyama H. Appl. Phys. Lett. 75 (1999) 2190
4. Watanabe S., Pelucchi E., Leifer K., Malko A., Dwir B., and Kapon E. Appl. Phys. Lett. 86 (2005) 243105
5. Ledentsov N., Ustinov V.M., Shchukin V.A., Kop'ev P.S., Alferov Zh.I., and Bimberg D. Semiconductors 32 (1998) 343
6. Shields A.J. Nat. Photonics 1 (2007) 215
7. Zhang R., Tsui R., Shiralagi K., Convey D., and Goronkin H. Appl. Phys. Lett. 73 (1998) 505
8. Yang B., Liu F., and Lagally M.G. Phys. Rev. Lett. 92 (2004) 025502
9. Kiravittaya S., Heidemeyer H., and Schmidt O.G. Physica E 23 (2004) 253
10. Lee H., Johnson J.A., Speck J.S., and Petroff P.M. J. Vac. Sci. Technol. B 18 (2000) 2193
11. Song H.Z., Nakata Y., Okada Y., Miyazawa T., Ohshima T., Takatsu M., Kawabe M., and Yokoyama N. Physica E (2004) 625
12. Atkinson P., Ward M.B., Bremner S.P., Anderson D., Farrow T., Jones G.A.C., Shields A.J., and Ritchie D.A. Jpn. J. Appl. Phys. 45 (2006) 2519
13. Tran T., Muller A., Shih C.K., Wong P.S., Balakrishnan G., Nuntawong N., Tatebayashi J., and Huffaker D.L. Appl. Phys. Lett. 91 (2007) 133104
14. Kitamura M., Nishioka M., Oshinowo J., and Arakawa Y. Appl. Phys. Lett. 66 (1995) 3663
15. Lee J.-S., Sugou S., and Masumoto Y. J. Cryst. Growth 205 (1999) 467
16. Wang W.I., Mendez E.E., Kuan T.S., and Esaki L. Appl. Phys. Lett. 47 (1985) 826
17. Takebe T., Fujii M., Yamamoto T., Fujita K., and Watanabe T. J. Appl. Phys. 81 (1997) 7273
18. Atkinson P., and Ritchie D.A. J. Cryst. Growth 278 (2005) 482
19. Koshiba S., Nakamura Y., Tsuchiya M., Noge H., Kano H., Nakamune Y., Noda T., and Sakaki H. J. Appl. Phys. 76 (1994) 4138
20. Shen X.-Q., Kishimoto D., and Nishinaga T. Jpn. J. Appl. Phys. 33 (1994) 11
21. Shiraishi K., Suzuki Y.Y., Kageshima H., and Ito T. Appl. Surf. Sci. 130-132 (1998) 431
22. Shaw D.W. J. Electrochem. Soc. 128 (1981) 874
23. Burke T.M., Linfield E.H., Ritchie D.A., Pepper M., and Burroughes J.H. J. Cryst. Growth 175/176 (1997) 416
24. Sample temperature was measured using a diffuse reflectance spectroscopy system from Thermionix. The relationship between GaAs absorption band-edge position (BE) and temperature (T) used can be approximated by (T/°C)=1.58×(BE/nm)-1220 over the temperature range 480-650 °C.
25. Herring C. Phys. Rev. 82 (1951) 87
26. Ikpi M.E., Atkinson P., Bremner S.P., and Ritchie D.A. J. Cryst. Growth 278 (2005) 113
27. Arent D.J., Nilsson S., Galeuchet Y.D., Meier H.P., and Walter W. Appl. Phys. Lett. 55 (1989) 2611
28. Setzer C., Platen J., Ranke W., and Jacobi K. Surf. Sci. 419 (1999) 291
29. Wang Z.M., Yasdanpanah V.R., Shultz J.L., and Salamo G.J. Appl. Phys. Lett. 81 (2002) 2965
30. Sanguinetti S., Chiantoni G., Grilli E., Guzzi M., Henini M., Polimeni A., Patane A., Eaves L., and Main P.C. Mater. Sci. Eng. B. 74 (2000) 239
31. Leonard D., Pond K., and Petroff P.M. Phys. Rev. B. 50 (1994) 11687
32. Placidi E., Arciprete F., Sessi V., Fanfoni M., Patella F., and Balzarotti A. Appl. Phys. Lett. 86 (2005) 241913
33. Shinohara M., and Inoue N. Appl. Phys. Lett. 66 (1995) 1936
34. Leon R., Senden T.J., Kim Y., Jagadish C., and Clark A. Phys. Rev. Lett. 78 (1997) 4942
35. Venables J.A., Spiller G.D.T., and Hanbücken M. Rep. Prog. Phys. 47 (1984) 399