Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 457-460

  Liu, X Y ^a   Aggerstam, T ^b   Janes P ^b   Holmstrom P ^b   Lourdudoss, S ^b   Thylen L ^b   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION;

ABSORPTION PEAKS; HIGH-RESOLUTION X-RAY DIFFRACTION; INTERSUBBAND ABSORPTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33947321547     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.258     Document Type: Article

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