Intersubband transition in symmetric AlxGa1 - xN/GaN double quantum wells with applied electric field

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 1, 2008, Pages 136-139

  Lei, S Y ^a   Dong, Z G ^b   Shen, B ^c   Zhang, G Y ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b SOUTHEAST UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

Applied electric field; Double quantum well; Intersubband transition

Indexed keywords

ALUMINUM ALLOYS; BINARY ALLOYS; ELECTRIC FIELDS; GALLIUM ALLOYS; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES;

ABSORPTION CO-EFFICIENT; DOUBLE QUANTUM WELL; INTERSUBBAND TRANSITIONS; OPTICAL COMMUNICATION WAVELENGTH; SELF-CONSISTENT CALCULATION; TWO-COLOR;

SEMICONDUCTOR QUANTUM WELLS;

EID: 56449093282     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.10.091     Document Type: Article

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