Theoretical and experimental operating wavelength of GaAs/Al 0.25Ga0.75As IR photodetectors

EPJ Applied Physics

Volumn 45, Issue 2, 2009, Pages

  Almaggoussi, A ^a   Abounadi, A ^a   Akabli, H ^a   Zekentes, K ^b   Androulaki, M ^b  

^a FACULTÉ DES SCIENCES ET TECHNIQUES GUÉLIZ   (Morocco)

^b INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL GROWTH; GALLIUM; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

BREWSTER ANGLES; ENVELOP FUNCTIONS; EXPERIMENTAL TECHNIQUES; INTER-SUBBAND TRANSITIONS; IR PHOTODETECTORS; IR SPECTROSCOPIES; MOLECULAR-BEAM EPITAXIES; MULTI-QUANTUM WELLS; OPERATING WAVELENGTHS; OPTICAL ABSORPTIONS;

ABSORPTION SPECTROSCOPY;

EID: 59449099237     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2009003     Document Type: Article

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