Room temperature operation of InAs/AlSb quantum cascade lasers

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 167-169

  Teissier, R ^a   Barate, D ^a   Vicet, A ^a   Alibert, C ^a   Baranov, A N ^a   Marcadet, X ^b   Renard, C ^b   Garcia, M ^b   Sirtori, C ^b,d   Revin, D ^c   Cockburn, J ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTER-SUBBAND TRANSITIONS; PLASMON ENHANCED WAVEGUIDES; QUANTUM CASCADE LASERS (QCL); VERTICAL TRANSITION DESIGN;

CASCADE CONNECTIONS; CURRENT DENSITY; ELECTRON ENERGY LEVELS; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3242892364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1768306     Document Type: Article

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