Influence of channel and underlap engineering on the high-frequency and switching performance of CNTFETs

IEEE Transactions on Nanotechnology

Volumn 11, Issue 3, 2012, Pages 526-533

  Kordrostami, Zoheir ^a   Sheikhi, M Hossein ^a   Zarifkar, Abbas ^a  

^a SHIRAZ UNIVERSITY   (Iran)

Author keywords

Carbon nanotube (CNT); cutoff frequency; on off ratio; switching delay; underlap

Indexed keywords

ASYMMETRIC CHANNEL; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DOPING LEVELS; ELECTRIC FIELD DISTRIBUTIONS; FIGURES OF MERITS; FRINGING FIELDS; HIGH FREQUENCY HF; HIGH FREQUENCY PERFORMANCE; METALLIC CONTACTS; ON/OFF RATIO; OPTIMIZED ARCHITECTURES; PERFORMANCE PARAMETERS; QUANTUM CAPACITANCE; SCHOTTKY BARRIERS; SINGLE HALO; SWITCHING DELAY; SWITCHING PERFORMANCE; SWITCHING TIME; UNDERLAP; UNDERLAP LENGTH;

CAPACITANCE; CARBON NANOTUBES; CUTOFF FREQUENCY; ELECTRIC FIELDS; OPTIMIZATION; POSITRON EMISSION TOMOGRAPHY; SCHOTTKY BARRIER DIODES; STAIRS;

SWITCHING;

EID: 84860870770     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2181998     Document Type: Article

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