Impact of a process variation on nanowire and nanotube device performance

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2369-2376

  Paul, Bipul C ^a,b   Fujita, Shinobu ^b   Okajima, Masaki ^b   Lee, Thomas H ^a   Wong, H S Philip ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

^b Toshiba America Research Inc   (United States)

Author keywords

CNFET performance under variation; Nanowire FET performance under variation; Process variation

Indexed keywords

NANOTUBES; NANOWIRES; NETWORKS (CIRCUITS);

PROCESS VARIATION;

MOSFET DEVICES;

EID: 41749091851     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901882     Document Type: Article

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