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Applied Physics A: Materials Science and Processing

Volumn 83, Issue 2, 2006, Pages 321-327

Concept of deterministic single ion doping with sub-nm spatial resolution

(12) Meijer, J a Vogel, T a Burchard, B a Rangelow, I W b Bischoff, L c Wrachtrup, J d Domhan, M d Jelezko, F d Schnitzler, W e Schulz, S A e Singer, K e Schmidt Kaler, F e

a RUHR UNIVERSITY BOCHUM (Germany)

b UNIVERSITY OF KASSEL (Germany)

c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

d UNIVERSITY OF STUTTGART (Germany)

e UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; NANOTECHNOLOGY; NITROGEN; PHOSPHORS; SEMICONDUCTOR DOPING; SOLID STATE DEVICES;

DIAMOND BASED SCHEMES; SINGLE ION DOPING; SOLID STATE QUANTUM COMPUTERS; SPATIAL RESOLUTION;

IONS;

EID: 33645276042 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3497-0 Document Type: Article

Times cited : (65)

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