Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs

Mathematical and Computer Modelling

Volumn 51, Issue 7-8, 2010, Pages 901-907

  Monga, U ^a   Borli H ^a   Fjeldly, T A ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

Capacitance modeling; Conformal mapping; Current modeling; Device modeling; Nanoscale MOSFET; Subthreshold slope

Indexed keywords

CAPACITANCE MODELING; CONFORMAL MAPPING TECHNIQUE; CURRENT MODELING; DOUBLE-GATE MOSFETS; MATERIAL COMBINATION; NANO SCALE; NANOSCALE MOSFETS; NUMERICAL SIMULATION; SUB-THRESHOLD CURRENT; SUBTHRESHOLD MODEL; SUBTHRESHOLD SLOPE;

CAPACITANCE; COMPUTER SIMULATION; MOSFET DEVICES; NANOSTRUCTURED MATERIALS;

CONFORMAL MAPPING;

EID: 76449112558     PISSN: 08957177     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mcm.2009.08.043     Document Type: Article

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