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Volumn 1, Issue , 2006, Pages 928-931

Fast photoluminescence imaging of silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; CHARACTERIZATION; CHARGE CARRIERS; IMAGE RESOLUTION; IMAGING SYSTEMS; PHOTOLUMINESCENCE;

EID: 41749115158     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279608     Document Type: Conference Paper
Times cited : (64)

References (11)
  • 1
    • 84949569515 scopus 로고    scopus 로고
    • Lifetime mapping of Si wafers by an infrared camera
    • Anchorage
    • M. Bail et al., "Lifetime mapping of Si wafers by an infrared camera", 28th IEEE PVSC, Anchorage 2000.
    • (2000) 28th IEEE PVSC
    • Bail, M.1
  • 2
    • 6344251800 scopus 로고    scopus 로고
    • Carrier density and lifetime imaging of silicon wafers by infrared lock-in thermography
    • Munich
    • S. Riepe et al., "Carrier density and lifetime imaging of silicon wafers by infrared lock-in thermography", 17th EPVSC, Munich 2001.
    • (2001) 17th EPVSC
    • Riepe, S.1
  • 4
    • 41749113097 scopus 로고    scopus 로고
    • Temperature dependent infrared camera lifetime mapping (ILM)
    • Paris, France
    • P. Pohl et al., "Temperature dependent infrared camera lifetime mapping (ILM)", 19th EPVSC, Paris, France 2004.
    • (2004) 19th EPVSC
    • Pohl, P.1
  • 5
    • 27944443296 scopus 로고    scopus 로고
    • Photoluminescence: A surprisingly sensitive lifetime technique
    • Orlando, USA
    • T. Trupke et al., "Photoluminescence: A surprisingly sensitive lifetime technique", 31st IEEE PVSC, Orlando, USA 2005.
    • (2005) 31st IEEE PVSC
    • Trupke, T.1
  • 7
    • 33746649178 scopus 로고    scopus 로고
    • Photoluminescence imaging of silicon wafers
    • accepted
    • T. Trupke et al., "Photoluminescence imaging of silicon wafers", Appl.Phys.Lett. accepted.
    • Appl.Phys.Lett
    • Trupke, T.1
  • 8
    • 41749124139 scopus 로고    scopus 로고
    • Application of Photoluminescence to High-efficiency Silicon Solar Cell Fabrication
    • M.D. Abbott et al., "Application of Photoluminescence to High-efficiency Silicon Solar Cell Fabrication", this conference.
    • this conference
    • Abbott, M.D.1
  • 9
    • 41749117299 scopus 로고    scopus 로고
    • Characterisation of PECVD silicon nitride passivation with photoluminescence imaging
    • F.W. Chen et al., "Characterisation of PECVD silicon nitride passivation with photoluminescence imaging", this conference.
    • this conference
    • Chen, F.W.1
  • 10
    • 41749088489 scopus 로고    scopus 로고
    • M.D. Abbott et al., Application of Photoluminescence Characterisation to the Development and Manufacturing of High-Efficiency Silicon Solar Cells, Manuscript in preparation 2006.
    • M.D. Abbott et al., "Application of Photoluminescence Characterisation to the Development and Manufacturing of High-Efficiency Silicon Solar Cells", Manuscript in preparation 2006.
  • 11
    • 41749122850 scopus 로고    scopus 로고
    • Comparative analysis of n-type versus p-type string ribbon silicon wafers
    • R.A. Bardos et al., "Comparative analysis of n-type versus p-type string ribbon silicon wafers", this conference.
    • this conference
    • Bardos, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.