Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers

Applied Physics Letters

Volumn 88, Issue 5, 2006, Pages 1-3

  Bardos, R A ^a   Trupke, T ^a   Schubert, M C ^b   Roth, T ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE;

MULTICRYSTALLINE SILICON WAFERS; PHOTOCONDUCTANCE; PHOTOLUMINESCENCE DATA; TRAPPING ARTIFACTS;

SILICON WAFERS;

EID: 31944443358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2165274     Document Type: Article

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