Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 847-851

  Giesecke, J A ^a   Walter, D ^a   Kopp, F ^a   Rosenits, P ^a   Schubert, M C ^a   Warta, W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON WAFERS; DOPANT CONCENTRATIONS; IRRADIATION INTENSITY; MINORITY CARRIER LIFETIMES; PHOTOLUMINESCENCE INTENSITIES; PRIORI INFORMATION; QUASI-STEADY STATE; SIMULTANEOUS DETERMINATIONS; TIME SHIFTS;

CARRIER CONCENTRATION; CARRIER MOBILITY; CONCENTRATION (PROCESS); IRRADIATION; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON WAFERS;

CARRIER LIFETIME;

EID: 78650101199     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5617178     Document Type: Conference Paper

References (9)

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