Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging

Progress in Photovoltaics: Research and Applications

Volumn 19, Issue 6, 2011, Pages 649-657

  Liu, Anyao ^a   Fan, Yang Chieh ^a,b   Macdonald, Daniel ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Interstitial iron distribution; Multicrystalline silicon; Phosphorus gettering; Photoluminescence imaging

Indexed keywords

DIRECTIONALLY SOLIDIFIED; DISLOCATION CLUSTERS; DISSOLVED IRON; GETTERING; GETTERING PROCESS; HIGH RESOLUTION IMAGE; HIGH TEMPERATURE; INGOT COOLING; INJECTION CARRIERS; INTERNAL GETTERING; INTERSTITIAL IRON; LATERAL DISTRIBUTIONS; MULTICRYSTALLINE SILICON; MULTICRYSTALLINE SILICON WAFERS; ON-WAFER; PHOSPHORUS GETTERING; PHOTOLUMINESCENCE IMAGES; PHOTOLUMINESCENCE IMAGING; PL IMAGE;

BORON; BORON COMPOUNDS; DISSOLUTION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INGOTS; IRON; IRON COMPOUNDS; PHOSPHORUS; PHOTOLUMINESCENCE; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 80052317542     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1082     Document Type: Article

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