Luminescence imaging for inline characterisation in silicon photovoltaics

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 4, 2011, Pages 131-137

  Trupke, Thorsten ^a   Nyhus, Jørgen ^b   Haunschild, Jonas ^c  

^a BT Imaging   (Australia)

^b REC Wafer AS   (Norway)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Photoluminescence imaging; Silicon; Solar cells

Indexed keywords

ACQUISITION TIME; CHARACTERISATION; DEVICE PARAMETERS; IN-LINE; IN-LINE MONITORING; LUMINESCENCE IMAGING; MEASUREMENT TIME; MEGA-PIXEL; PHOTOLUMINESCENCE IMAGING; PHOTOVOLTAICS; SILICON SAMPLES; SPATIAL INFORMATIONS;

NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS;

SILICON WAFERS;

EID: 79954456306     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201084028     Document Type: Review

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