Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence

Solar Energy Materials and Solar Cells

Volumn 95, Issue 3, 2011, Pages 1011-1018

  Giesecke, J A ^a   Schubert, M C ^a   Michl, B ^a   Schindler, F ^a   Warta, W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Carrier lifetime; Carrier mobility; Dopant concentration; Photoluminescence; Silicon

Indexed keywords

DOPANT CONCENTRATIONS; INHOMOGENEOUS MATERIALS; LIFETIME MEASUREMENTS; MATERIAL PARAMETER; METALLURGICAL-GRADE SILICON; MINORITY CARRIER LIFETIMES; MULTICRYSTALLINE; PHOTOLUMINESCENCE IMAGES; PRIORI INFORMATION; QUASI-STEADY STATE; SOLAR CELL EFFICIENCIES; SPATIALLY RESOLVED; TIME-SCALES; TRAP DENSITY;

CARRIER CONCENTRATION; CARRIER LIFETIME; CONCENTRATION (PROCESS); IMAGING TECHNIQUES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON WAFERS;

CARRIER MOBILITY;

EID: 78751648337     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.12.016     Document Type: Article

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