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Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

Imaging of chromium point defects in p-type silicon

(3) Habenicht, Holger a Schubert, Martin C a Warta, Wilhelm a

a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE CROSS SECTIONS; CHROMIUM CONCENTRATION; CR CONCENTRATION; DEFECT CONCENTRATIONS; DEFECT DISTRIBUTION; DISLOCATION CLUSTERS; DOPING DEPENDENCE; ELECTRONS AND HOLES; ENERGY LEVEL; METASTABLE DEFECT; MONOCRYSTALLINE; MULTICRYSTALLINE; P-TYPE SILICON; PHOTOLUMINESCENCE IMAGING; QUANTITATIVE EVALUATION; SPATIALLY RESOLVED;

BORON; BORON COMPOUNDS; CONCENTRATION (PROCESS); DEFECTS; GRAIN BOUNDARIES; POINT DEFECTS; SILICON WAFERS;

CHROMIUM;

EID: 77955897613 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3459892 Document Type: Article

Times cited : (29)

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