Advances in the surface passivation of silicon solar cells

Energy Procedia

Volumn 15, Issue , 2012, Pages 30-39

  Schmidt, J ^a,b   Werner, F ^a   Veith, B ^a   Zielke, D ^a   Steingrube, S ^a,b   Altermatt, P P ^a,b   Gatz, S ^a   Dullweber, T ^a   Brendel, R ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Aluminium oxide; Silicon; Solar cells; Surface passivation

Indexed keywords

ALUMINIUM OXIDE; CHEMICAL VAPOUR DEPOSITION; CRYSTALLINE SI; DEPOSITION TECHNIQUE; FUTURE PROSPECTS; IN-LINE; INDUSTRIAL SOLAR CELLS; MASS PRODUCTION; SURFACE PASSIVATION; ULTRA-FAST;

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OXIDES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SOLAR CELLS;

ALUMINUM;

EID: 84860499080     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.02.004     Document Type: Conference Paper

References (41)

1. Hezel R, Jaeger K. Low-temperature surface passivation of silicon for solar cells. J. Electrochem. Soc. 1989; 136: 518.
2. Agostinelli G, Delabie A, Vitanov P, Alexieva Z, Dekkers HFW, De Wolf S, Beaucarne G. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge. Sol. Energy Mat. Sol. Cells 2006; 90: 3438.
3. 3. Appl. Phys. Lett. 2006; 89: 042112.
4. 3. Prog. Photovolt. Res. Appl. 2008; 16: 461.
5. 3. Appl. Phys. Lett. 2007; 91: 112107.
6. Bock R, Schmidt J, Mau S, Hoex B, Brendel R. The ALU+ concept: n-type silicon solar cells with surface-passivated screen-printed aluminium-alloyed rear emitter. IEEE Trans. Electron Devices 2010; 57: 1966.
7. 3. J. Appl. Phys. 2008; 104: 113703.
8. Steingrube S, Altermatt PP, Zielke D, Werner F, Schmidt J, Brendel R. Reduced passivation of silicon surfaces at low injection densities caused by H-induced defects. Proc. 25th European Photovoltaic Solar Energy Conf., Valencia, Spain, Munich: WIP; 2010, p. 1748-54.
9. Altermatt PP, Plagwitz H, Bock R, Schmidt J, Brendel R, Kerr MJ, Cuevas A. The surface recombination velocity at boron-doped emitters: comparison between various passivation techniques. Proc. 21st European Photovoltaic Solar Energy Conf., Dresden, Germany, Munich: WIP; 2006, p. 647-50.
10. Cuevas A, Kerr MJ, Schmidt J. Passivation of crystalline silicon using silicon nitride. Proc. 3rd World Conf. Photovoltaic Solar Energy Conversion, Osaka, Japan; 2003, p. 913-8.
11. Elmiger JR, Kunst M. Investigation of charge carrier injection in silicon nitride/silicon junctions. Appl. Phys. Lett. 1996; 69: 517.
12. 2 interface. J. Appl. Phys. 1992; 71: 4422.
13. 3. Appl. Phys. Lett. 2010; 96: 112101.
14. 3 interface. J. Appl. Phys. 2011; 109: 113701.
15. Warren WL, Rong FC, Poindexter EH, Gerardi GJ, Kanicki J. Structural identification of the silicon and nitrogen dangling-bond centres in amorphous silicon nitride. J. Appl. Phys. 1991; 70: 346.
16. Schmidt J, Aberle AG. Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapour deposition. J. Appl. Phys. 1999; 85: 3626.
17. 3. Phys. Rev. B 2003;68: 085110.
18. Dauwe S, Schmidt J, Metz A, Hezel R. Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination. Proc. 29th IEEE Photovoltaic Specialists Conf., New Orleans, USA, New York: IEEE; 2002, p.162-5.
19. 2 interface recombination parameters using a gate-controlled point-junction diode under illumination. IEEE Trans. Electron Dev. 1988; 35: 203.
20. Dauwe S. Low-temperature rear surface passivation of crystalline silicon solar cells [PhD thesis]. University of Hanover, 2004.
21. Schmidt J, Moschner JD, Henze J, Dauwe S, Hezel R. Recent progress in the surface passivation of silicon solar cells using silicon nitride. Proc. 19th European Photovoltaic Solar Energy Conf., Paris, France, Munich: WIP; 2004, p. 391-6.
22. x interfaces by surface damage. J. Appl. Phys. 2010; 108: 014506.
23. Kerr MJ. Surface, emitter and bulk recombination in silicon and development of silicon nitride passivated solar cells [PhD thesis]. Australian National University, 2002.
24. Chen FW, Li T, Cotter JE. Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapour deposited silicon nitride. Appl. Phys. Lett. 2006; 88: 263514.
25. Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A, High-speed spatial atomic layer deposition of aluminium oxide layers for solar cell passivation. Advanced Materials 2010; 22: 3564.
26. Werner F, Veith B, Tiba V, Poodt P, Roozeboom F, Brendel R, Schmidt J. Very low surface recombination velocities on p-and n-type c-Si by ultrafast spatial atomic layer deposition of aluminium oxide. Appl. Phys. Lett. 2010; 97: 162103.
27. Miyajima S, Irikawa J, Yamada A, Konagai M. Hydrogenated aluminium oxide films deposited by plasma enhanced chemical vapour deposition for passivation of p-type crystalline silicon. Proc. 23rd Photovoltaic Solar Energy Conf., Valencia, Spain, Munich: WIP; 2008, p. 1029.
28. Saint-Cast P, Kania D, Hofmann M, Benick J, Rentsch J, Preu R. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminium oxide. Appl. Phys Lett. 2009; 95: 151502.
29. Li TT, Cuevas A. Effective surface passivation of crystalline silicon by rf sputtered aluminium oxide. Phys. Status Solidi RRL 2009; 3: 160.
30. 3 deposition techniques for the surface passivation of Si solar cells. Proc. 25th European Photovoltaic Solar Energy Conf., Valencia, Spain (WIP, Munich, 2010), p. 1130-1133.
31. x stacks. Phys. Status Solidi RRL 2009; 3: 287.
32. x stacks for the surface passivation of silicon. Energy Procedia 2011; in press.
33. 3 passivation on p-type silicon surfaces for solar cell applications. Phys. Status Solidi RRL 2009; 3: 233.
34. x:H stacks for surface passivation of crystalline silicon. J. Appl. Phys. 2009; 106: 114907.
35. 3-passivated boron emitters. Appl. Phys. Lett. 2008; 92: 253504.
36. Zielke D, Petermann JH, Werner F, Veith B, Brendel R, Schmidt J. Contact passivation in silicon solar cells using atomic-layer-deposited aluminium oxide layers. Phys. Status Solidi RRL 2011; 5: 298.
37. Gatz S, Hannebauer H, Hesse R, Werner F, Schmidt A, Dullweber T, Schmidt J, Bothe K, Brendel R. 19.4%-efficient large-area fully screen-printed silicon solar cells. Phys. Status Solidi RRL 2011; 5: 147.
38. Dullweber T, Gatz S, Hannebauer H, Falcon T, Hesse R, Schmidt J, Brendel R. Towards 20% efficient large-area screen-printed rear-side-passivated silicon solar cells. Prog. Photovolt. Res. Appl. 2011, submitted.
39. Glunz SW, Benick J, Biro D, Bivour M, Hermle M, Pysch D, Rauer M, Reichel C, Richter A, Rüdiger M, Schmiga C, Suwito D, Wolf A, Preu R. n-type silicon-enabling efficiencies >20% in industrial production. Proc. 35th IEEE Photovoltaic Specialists Conf., Honolulu, USA, New York: IEEE; 2010, p. 50-6.
40. Kiefer F, Ulzhöfer C, Brendemühl T, Harder NP, Brendel R, Mertens V, Bordihn S, Peters C, Müller JW. High-efficiency n-type emitter-wrap-through silicon solar cells. IEEE Journal of Photovoltaics 2011, submitted.
41. x layer stack passivation for the front side boron emitter of n-type silicon solar cells. Proc. 25th European Photovoltaic Solar Energy Conf., Valencia, Spain (WIP, Munich, 2010), p. 1453-9.