Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 8, 2011, Pages 298-300

  Zielke, Dimitri ^a   Petermann, Jan Hendrik ^a   Werner, Florian ^a   Veith, Boris ^a   Brendel, Rolf ^a,b   Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Aluminum oxide; Atomic layer deposition; Contact passivation; Silicon; Solar cells

Indexed keywords

AL CONTACT; ALUMINUM OXIDES; ATOMIC LAYER; ATOMIC LAYER DEPOSITED; LAYER THICKNESS; SERIES RESISTANCES; TUNNEL CONTACTS; TUNNEL PROBABILITY;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CONVERSION EFFICIENCY; OPEN CIRCUIT VOLTAGE; OXIDES; PASSIVATION; PHOSPHORUS; SILICON SOLAR CELLS; VANADIUM;

ALUMINUM COATINGS;

EID: 79961049007     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105285     Document Type: Article

References (13)

1. G. Agostinelli et al., Sol. Energy Mater. Sol. Cells 90, 3438 (2006).
2. B. Hoex et al., Appl. Phys. Lett. 89, 042112 (2006).
3. B. Hoex et al., J. Appl. Phys. 104, 113703 (2008).
4. G. Dingemans et al., Electrochem. Solid-State Lett. 13, H76 (2010).
5. A. Richter et al., Phys. Status Solidi RRL 5, 202 (2011).
6. J. Schmidt et al., Prog. Photovoltaics Res. Appl. 16, 461 (2008).
7. P. Saint-Cast et al., IEEE Electron Device Lett. 31, 695 (2010).
8. J. Schmidt et al., Proc. 25th Europ. Photovolt. Solar Energy Conf., Valencia, Spain (WIP, Munich, 2010), p. 1130.
9. J. L. van Hemmen et al., J. Electrochem. Soc. 154, G165 (2007).
10. J. Schmidt et al., Phys. Status Solidi RRL 3, 287 (2009).
11. T. Suntola and J. Hyviirinen, Annu. Rev. Mater. Sci. 15, 177 (1985).
12. D. E. Kane and R. M. Swanson, 18th IEEE Photovolt. Speci. Conf., Las Vegas, USA (IEEE, New York, 1985), p. 578.
13. P. P. Altermatt et al., Prog. Photovoltaics Res. Appl. 4, 399 (1996).