Design of high-temperature SiC three-phase AC-DC converter for >100°C ambient temperature

2010 IEEE Energy Conversion Congress and Exposition, ECCE 2010 - Proceedings

Volumn , Issue , 2010, Pages 1283-1289

  Wang, Ruxi ^a   Ning, Puqi ^a   Boroyevich, Dushan ^a   Danilovic, Milisav ^a   Wang, Fred ^b   Kaushik, Rajashekara ^c  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c ROLLS ROYCE CORPORATION   (United States)

Author keywords

High temperature converter; Silicon carbide JFET; Silicon on insulator technology

Indexed keywords

AC-DC CONVERTERS; AMBIENT TEMPERATURES; DESIGN PROCESS; HARSH ENVIRONMENT; HIGH TEMPERATURE; HIGH TEMPERATURE COMPONENTS; PASSIVE COMPONENTS; PLANAR STRUCTURE; SILICON ON INSULATOR; THREE-PHASE PWM RECTIFIERS;

ENERGY CONVERSION; GALLIUM NITRIDE; HIGH TEMPERATURE APPLICATIONS; INDUSTRIAL APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 78650127355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2010.5617813     Document Type: Conference Paper

References (11)

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